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Precision Current Measurement

A Major Qualifying Project

Submitted to the Faculty of

Worcester Polytechnic Institute

In partial fulfillment of the requirements for the

Degree of Bachelor of Science

By

__________________________

Andrew Houde

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1 Abstract

ABSTRACT: Current measurement is presently possible through a number of different

techniques, including resistive sensing, current transformers, and magnetoresistive

sensing. The measurement of current using Hall-effect sensors is possible, but not with

high precision over a large temperature range. Through laboratory experimentation and

research, this project details the characterization of a Hall-effect sensor and provides

current measurement results over a range of -6A to 6A that are accurate within 1% over a

temperature range of -25 degrees C to +85 degrees C.

In this precision current measurement device, the Hall-effect sensor senses the

magnetic field produced by a current flowing through a wire. Using equations

programmed into PIC assembly microprocessor code, the output of this sensor is then

converted into a current value. If the ambient temperature is other than 25 degrees C, the

microprocessor also compensates for the effect of temperature on the sensor in its

calculations. The designed device, as tested, meets all of the initially established

specifications and goals.

   
Interrupts on PIC micro
 
Vasile Surducan

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If u are becoming a PIC-microcontroller user and all new things are puzzling you, starting with interrupts would be "the hell thing" because you'll have to manage with your own imagination all PIC resource, to got the final goal, a functional and stabile circuit board. Usually................................................................................................
   

Low temperature data remanence in

static RAM

Sergei Skorobogatov

June 2002

15 JJ Thomson Avenue

Cambridge CB3 0FD

United Kingdom

phone +44 1223 763500

http://www.cl.cam.ac.uk/

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Abstract

Security processors typically store secret key material in static RAM, from which power is removed if

the device is tampered with. It is commonly believed that, at temperatures below −20°C, the contents

of SRAM can be ‘frozen’; therefore, many devices treat temperatures below this threshold as

tampering events. We have done some experiments to establish the temperature dependency of data

retention time in modern SRAM devices. Our experiments show that the conventional wisdom no

longer holds.